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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 17V |
| 电压 - 击穿（分钟）: | 18.9V |
| 电压 - 钳位（最大值）@ ipp: | 27.6V |
| 电流 - 峰值脉冲 (10/1000µs): | 653A |
| 功率-峰值脉冲: | 18000W (18kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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1N6065Roving Networks / Microchip Technology |
TVS DIODE 95V 176V DO13 |
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MAPLAD6.5KP26CAE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V MINI-PLAD |
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MXSMCJ24A/TRRoving Networks / Microchip Technology |
HI REL TVS |
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MXSMLG12AE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO215AB |
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MXPLAD18KP11CARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V PLAD |
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30KPA280CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 280V 464V P600 |
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MALCE110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 178V CASE-1 |
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30KPA160AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 160V 252.6V P600 |
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MAPLAD18KP45AE3Roving Networks / Microchip Technology |
TVS DIODE 45V 72.7V PLAD |
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MAPLAD130KP275CAE3Roving Networks / Microchip Technology |
TVS DIODE 275V 445V PLAD |
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JAN1N6119USRoving Networks / Microchip Technology |
TVS DIODE 27.4V 52.4V B SQ-MELF |
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5KP26E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 26V 46.6V P600 |
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1N5640Roving Networks / Microchip Technology |
TVS DIODE |
