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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 154V |
| 电压 - 击穿（分钟）: | 171V |
| 电压 - 钳位（最大值）@ ipp: | 246V |
| 电流 - 峰值脉冲 (10/1000µs): | 6.1A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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1.5CE220CA TR PBFREECentral Semiconductor |
TVS DIODE 185V 328V DO201 |
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30KPA288CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 288V P600 |
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MXLPLAD6.5KP12AE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V PLAD |
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MXLSMCG110CAE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AB |
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TPSMC36AHE3_B/HVishay General Semiconductor – Diodes Division |
TVS DIODE 30.8V 49.9V DO214AB |
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30KPA120E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 120V P600 |
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SMCJ18CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MXP6KE100CAE3Roving Networks / Microchip Technology |
TVS DIODE 85.5V 137V T-18 |
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MAPLAD36KP78ARoving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
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TPSMB64AWickmann / Littelfuse |
TVS SURF MT DO214AA AEQ101 TR |
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MXLPLAD30KP15ARoving Networks / Microchip Technology |
TVS DIODE 15V 25.8V PLAD |
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30KPA48AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 48V 81.6V P600 |
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MXLPLAD7.5KP12AE3Roving Networks / Microchip Technology |
TVS DIODE |
