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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 6.5V |
| 电压 - 击穿（分钟）: | 7.22V |
| 电压 - 钳位（最大值）@ ipp: | 11.2V |
| 电流 - 峰值脉冲 (10/1000µs): | 267.9A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AB, SMC Gull Wing |
| 供应商设备包: | SMLG (DO-215AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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1N6302AHE3_A/CVishay General Semiconductor – Diodes Division |
TVS DIODE 154V 246V 1.5KE |
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JAN1N6105ARoving Networks / Microchip Technology |
TVS DIODE 6.9V 13.4V AXIAL |
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MPLAD15KP85AE3/TRRoving Networks / Microchip Technology |
TVS |
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JTXV1N6116AUSSemtech |
T MET BI 500W 27V |
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MSMCJ8.5CA/TRRoving Networks / Microchip Technology |
TVS |
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MXPLAD18KP78AE3Roving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
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MSMBG18CA/TRRoving Networks / Microchip Technology |
TVS |
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TVS DIODE 85.5V 137V T-18 |
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MXLPLAD15KP30AE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.4V PLAD |
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SMCG6060/TR13Microsemi |
TVS DIODE 60V 108V DO215AB |
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JTXV1N6153Semtech |
T MET BI 1500W 22.8V HRV |
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MXLSMLG110CAE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AB |
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MXLPLAD30KP220ARoving Networks / Microchip Technology |
TVS DIODE 220V 356V PLAD |
