English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 28V |
| 电压 - 击穿（分钟）: | 31.1V |
| 电压 - 钳位（最大值）@ ipp: | 45.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 396A |
| 功率-峰值脉冲: | 18000W (18kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTX1N6117ARoving Networks / Microchip Technology |
TVS DIODE 22.8V 41.6V AXIAL |
|
|
M1.5KE9.1ARoving Networks / Microchip Technology |
TVS DIODE 7.78V 13.4V CASE-1 |
|
|
MAPLAD18KP11CARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V PLAD |
|
|
MXLSMCJLCE8.0A/TRRoving Networks / Microchip Technology |
HI REL TVS |
|
|
MASMLG26AE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO215AB |
|
|
MALCE43AE3Roving Networks / Microchip Technology |
TVS DIODE 43V 69.4V CASE-1 |
|
|
MXP6KE160CAE3Roving Networks / Microchip Technology |
TVS DIODE 136V 219V T-18 |
|
|
MAPLAD30KP17ARoving Networks / Microchip Technology |
TVS DIODE 17V 28.8V PLAD |
|
|
SMB6F30AYSTMicroelectronics |
AUTOMOTIVE 600 W, 30 V TVS IN SM |
|
|
MSMBJ5.0A/TRRoving Networks / Microchip Technology |
TVS |
|
|
JANTX1N6154USRoving Networks / Microchip Technology |
TVS DIODE 25.1V 47.99V C SQ-MELF |
|
|
MQ1N8154Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MXLP6KE75ARoving Networks / Microchip Technology |
TVS DIODE 64.1V 103V T-18 |
