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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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1.5SMC12AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
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MPLAD36KP36CAE3Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
|
|
5.0SMLJ51A-TPMicro Commercial Components (MCC) |
TVS DIODE 51V 82.4V DO214AB |
|
|
MXSMLG70CAE3Roving Networks / Microchip Technology |
TVS DIODE 70V 113V DO215AB |
|
|
PESD5V0S1UJFNexperia |
TVS DIODE 5V 19V SC90 |
|
|
MPLAD18KP8.0AE3Roving Networks / Microchip Technology |
TVS DIODE 8V 13.6V PLAD |
|
|
MSMCGLCE54AE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V DO215AB |
|
|
MXSMCG64AE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V DO215AB |
|
|
MV1N8147Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MXLPLAD7.5KP10AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MAPLAD18KP78CAE3Roving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
|
MXLP6KE20AE3Roving Networks / Microchip Technology |
TVS DIODE 17.1V 27.7V T-18 |
|
|
MXLPLAD18KP9.0CAE3Roving Networks / Microchip Technology |
TVS DIODE 9V 15.4V PLAD |
