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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXL1.5KE6.8AE3Roving Networks / Microchip Technology |
TVS DIODE 5.8V 10.5V CASE-1 |
|
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P4SMA24CA-M3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 20.5V 33.2V DO214AC |
|
|
MXSMLG120CARoving Networks / Microchip Technology |
TVS DIODE 120V 193V DO215AB |
|
|
JAN1N6168USRoving Networks / Microchip Technology |
TVS DIODE 91.2V 173.36V SQ-MELF |
|
|
MASMCGLCE54ARoving Networks / Microchip Technology |
TVS DIODE 54V 87.1V DO215AB |
|
|
MAPLAD18KP64AE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V PLAD |
|
|
MXLP6KE18AE3Roving Networks / Microchip Technology |
TVS DIODE 15.3V 25.2V T-18 |
|
|
MXLPLAD36KP260ARoving Networks / Microchip Technology |
TVS DIODE 260V 419V PLAD |
|
|
MAPLAD30KP85CAE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V PLAD |
|
|
JANTX1N6474US/TRRoving Networks / Microchip Technology |
TVS DIODE 30.5V 47.5V GMELF |
|
|
MXLP6KE22ARoving Networks / Microchip Technology |
TVS DIODE 18.8V 30.6V T-18 |
|
|
CPDV15V0-HFComchip Technology |
ESD DIODE 15VWM BI-DIRECTIONAL S |
|
|
MSMCGLCE120AE3Roving Networks / Microchip Technology |
TVS DIODE 120V 193V DO215AB |
