English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 26.5V (Max) |
| 电压 - 击穿（分钟）: | 28V |
| 电压 - 钳位（最大值）@ ipp: | 50V |
| 电流 - 峰值脉冲 (10/1000µs): | 3A (8/20µs) |
| 功率-峰值脉冲: | 150W |
| 电源线保护: | No |
| 应用: | Automotive |
| 电容@频率: | 10pF @ 1MHz |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SC-70, SOT-323 |
| 供应商设备包: | SOT-323 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1.5SMC8.2CA-QJ.W. Miller / Bourns |
DIO TVS VRWM 7.02V 1500W BIDIR S |
|
|
MXL1.5KE39CAE3Roving Networks / Microchip Technology |
TVS DIODE 33.3V 53.9V CASE-1 |
|
|
MXLSMCGLCE8.0ARoving Networks / Microchip Technology |
TVS DIODE 8V 13.6V DO215AB |
|
|
SMCG6041/TR13Microsemi |
TVS DIODE 9V 17.3V DO215AB |
|
|
JAN1N6151USRoving Networks / Microchip Technology |
TVS DIODE 18.2V 34.97V C SQ-MELF |
|
|
MXLPLAD36KP130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
|
JANTXV1N6112Roving Networks / Microchip Technology |
TVS DIODE 13.7V 26.36V AXIAL |
|
|
1N6472USRoving Networks / Microchip Technology |
TVS DIODE 15V 26.5V GMELF |
|
|
MPLAD36KP300CAE3Roving Networks / Microchip Technology |
TVS DIODE 300V 483V PLAD |
|
|
MASMLG48AE3Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V DO215AB |
|
|
MSMBJ24AE3/TRRoving Networks / Microchip Technology |
TVS |
|
|
MXPLAD7.5KP14CARoving Networks / Microchip Technology |
TVS DIODE |
|
|
MP6KE180CAE3Roving Networks / Microchip Technology |
TVS DIODE 154V 246V T-18 |
