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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 13V |
| 电压 - 击穿（分钟）: | 14.4V |
| 电压 - 钳位（最大值）@ ipp: | 21.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 302A |
| 功率-峰值脉冲: | 6500W (6.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SMCJ28AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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TVS DIODE |
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30KPA70AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 70V 109V P600 |
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TVS DIODE |
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JTXV1N6107Semtech |
T MET BI 500W 11V |
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TVS DIODE 33V 53.3V DO215AB |
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MAP6KE130AE3Roving Networks / Microchip Technology |
TVS DIODE 111V 179V T-18 |
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SMCG6042E3/TR13Microsemi |
TVS DIODE 10V 19V DO215AB |
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MSMLJ43CA/TRRoving Networks / Microchip Technology |
TVS |
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MX1.5KE10AE3Roving Networks / Microchip Technology |
TVS DIODE 8.55V 14.5V CASE-1 |
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MPLAD18KP58CAE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V PLAD |
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1N6476Roving Networks / Microchip Technology |
TVS DIODE 51.6V 78.5V AXIAL |
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D6V3S1U2LP-7BZetex Semiconductors (Diodes Inc.) |
SURGE PROTECTION PP X1-DFN1006-2 |
