类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
类型: | - |
单向通道: | - |
双向通道: | - |
电压 - 反向间隔(典型值): | - |
电压 - 击穿(分钟): | - |
电压 - 钳位(最大值)@ ipp: | - |
电流 - 峰值脉冲 (10/1000µs): | - |
功率-峰值脉冲: | - |
电源线保护: | - |
应用: | - |
电容@频率: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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MXSMLG40AE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V DO215AB |
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JANTX1N6132ARoving Networks / Microchip Technology |
TVS DIODE 91.2V 165.1V AXIAL |
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MXUPT24Roving Networks / Microchip Technology |
TVS DIODE |
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MAPLAD30KP18ARoving Networks / Microchip Technology |
TVS DIODE 18V 30.8V PLAD |
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MXL1.5KE16CAE3Roving Networks / Microchip Technology |
TVS DIODE 13.6V 22.5V CASE-1 |
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MXPLAD6.5KP14ARoving Networks / Microchip Technology |
TVS DIODE 14V 23.2V PLAD |
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VCAN16A2-03G-E3-18Vishay General Semiconductor – Diodes Division |
ESD PROTECTION DIODE SOT323-E3 |
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MAPLAD18KP8.5ARoving Networks / Microchip Technology |
TVS DIODE 85V 137V PLAD |
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DF3A6.8FV,L3FToshiba Electronic Devices and Storage Corporation |
UNIDIRECTIONAL ESD DIODE 2 LINES |
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SMCJ110AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MASMCJ40CA/TRRoving Networks / Microchip Technology |
HI REL TVS |
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JTX1N6110AUSSemtech |
T MET BI 500W 15V SM |
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MAPLAD36KP45CARoving Networks / Microchip Technology |
TVS DIODE 45V 72.7V PLAD |