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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 28V |
| 电压 - 击穿（分钟）: | 31.1V |
| 电压 - 钳位（最大值）@ ipp: | 45.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 143A |
| 功率-峰值脉冲: | 6500W (6.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | Mini-PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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5KP6.5E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 6.5V 12.3V P600 |
|
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MPLAD36KP90CAE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
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SMCJ150CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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1.5SMC30AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
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SMCG6054E3/TR13Microsemi |
TVS DIODE 34V 61.9V DO215AB |
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SMCJ17CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MXLPLAD18KP120CARoving Networks / Microchip Technology |
TVS DIODE 120V 193V PLAD |
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MXUPTB10E3Roving Networks / Microchip Technology |
TVS DIODE |
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SMC5K14A-M3/HVishay General Semiconductor – Diodes Division |
TVS DIODE 14V 23.2V DO214AB |
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TPSMC24AHE3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 20.5V 33.2V DO214AB |
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TPSMB36AHM3_A/IVishay General Semiconductor – Diodes Division |
600W 36V 5% SMB PAR |
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MASMLG130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
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|
JTXV1N6132AUSSemtech |
T MET BI 500W 120V |
