English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 376V |
| 电压 - 击穿（分钟）: | 418V |
| 电压 - 钳位（最大值）@ ipp: | 600V |
| 电流 - 峰值脉冲 (10/1000µs): | 2.6A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | DO-201 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMCJ160CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
1N6474Semtech |
TVS DIODE 30.5V 47.5V AXIAL |
|
|
30KPA43AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 43V 73V P600 |
|
|
MASMCGLCE11AE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AB |
|
|
1.5SMC300AHM3_B/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1.5KW 300V DO214AB |
|
|
MSMLJ5.0AE3/TRRoving Networks / Microchip Technology |
TVS |
|
|
MPLAD36KP51CARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
|
|
MSMCJLCE170A/TRRoving Networks / Microchip Technology |
TVS |
|
|
MXL1.5KE300CARoving Networks / Microchip Technology |
TVS DIODE 256V 414V CASE-1 |
|
|
MAPLAD6.5KP28CAE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.5V MINI-PLAD |
|
|
JTXV1N6463Semtech |
TVS |
|
|
JANTX1N5555Roving Networks / Microchip Technology |
TVS DIODE 30.5V 47.5V DO13 |
|
|
15KPA022C-SD-QJ.W. Miller / Bourns |
TVS DIODE 15KP |
