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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 43V |
| 电压 - 击穿（分钟）: | 47.8V |
| 电压 - 钳位（最大值）@ ipp: | 69.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 519A |
| 功率-峰值脉冲: | 36000W (36kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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TPSMC13AHE3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 11.1V 18.2V DO214AB |
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MXSMCG6.0CARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AB |
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30KPA39CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 39V 67.2V P600 |
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30KPA36AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 36V 61.8V P600 |
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SMCJ12CA-HFComchip Technology |
DIODE TVS 12V 1500W SMC BI-DIR |
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MV1N8165USRoving Networks / Microchip Technology |
TVS DIODE |
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MXSMCGLCE80ARoving Networks / Microchip Technology |
TVS DIODE 80V 129V DO215AB |
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MP6KE30AE3Roving Networks / Microchip Technology |
TVS DIODE 25.6V 41.4V T-18 |
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MXL1.5KE9.1CARoving Networks / Microchip Technology |
TVS DIODE 7.78V 13.4V CASE-1 |
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MXLPLAD36KP26CAE3Roving Networks / Microchip Technology |
TVS DIODE 26V 43V PLAD |
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JAN1N6146Roving Networks / Microchip Technology |
TVS DIODE 11.4V 22.05V C AXIAL |
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MAPLAD7.5KP15ARoving Networks / Microchip Technology |
TVS DIODE |
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EPS15Roving Networks / Microchip Technology |
TVS DIODE |
