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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 78V |
| 电压 - 击穿（分钟）: | 87.1V |
| 电压 - 钳位（最大值）@ ipp: | 129V |
| 电流 - 峰值脉冲 (10/1000µs): | 234.9A |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MX1.5KE7.5AE3Roving Networks / Microchip Technology |
TVS DIODE 6.4V 11.3V CASE-1 |
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MQ1N8171USRoving Networks / Microchip Technology |
TVS DIODE |
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SMAJ33CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 33V 59V DO214AC |
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JTX1N6102AUSSemtech |
T MET BI 500W 6.8V SM |
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MXLPLAD36KP64CARoving Networks / Microchip Technology |
TVS DIODE 64V 103V PLAD |
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MXLP6KE13AE3Roving Networks / Microchip Technology |
TVS DIODE 11.1V 18.2V T-18 |
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SM15T33AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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MXLSMCG9.0AE3Roving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO215AB |
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1.5SMC20CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
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MXLSMLG85ARoving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
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MAPLAD7.5KP40CARoving Networks / Microchip Technology |
TVS DIODE |
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SM8S18A-QJ.W. Miller / Bourns |
DIO TVS VWM 18V 6K6W UNIDIR SM8S |
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MXPLAD18KP28AE3Roving Networks / Microchip Technology |
TVS DIODE 28V 45.5V PLAD |
