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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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JAN1N6116AUSRoving Networks / Microchip Technology |
TVS DIODE 20.6V 37.4V B SQ-MELF |
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MSMLG43ARoving Networks / Microchip Technology |
TVS DIODE 43V 69.4V DO215AB |
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MXLSMCGLCE11ARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AB |
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MSMCJ5.0A/TRRoving Networks / Microchip Technology |
TVS |
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MSMBJSAC8.5E3/TRRoving Networks / Microchip Technology |
TVS |
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MAPLAD18KP12AE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V PLAD |
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MSMBG130AE3/TRRoving Networks / Microchip Technology |
TVS |
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MV1N8171Roving Networks / Microchip Technology |
TVS DIODE |
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MSMCGLCE130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
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MSMLG6.0AE3Roving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AB |
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MXLPLAD6.5KP30ARoving Networks / Microchip Technology |
TVS DIODE 30V 48.4V PLAD |
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15KPA43CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 43V P600 |
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15KPA18CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 18V P600 |
