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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 48V |
| 电压 - 击穿（分钟）: | 53.3V |
| 电压 - 钳位（最大值）@ ipp: | 77.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 38.8A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AB, SMC Gull Wing |
| 供应商设备包: | SMLG (DO-215AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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1.5SMC130AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
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5KP130E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 130V 231V P600 |
|
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15KPA180A-HRWickmann / Littelfuse |
TVS DIODE 180V 288.5V P600 |
|
|
1N6104ARoving Networks / Microchip Technology |
TVS DIODE 6.2V 12.1V AXIAL |
|
|
MAPLAD18KP11AE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V PLAD |
|
|
MSMCGLCE26ARoving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO215AB |
|
|
MXLPLAD36KP54CAE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V PLAD |
|
|
5KP43CA-BWickmann / Littelfuse |
TVS DIODE 43V 69.4V P600 |
|
|
MXLP6KE82CARoving Networks / Microchip Technology |
TVS DIODE 70.1V 113V T-18 |
|
|
MXLPLAD7.5KP36CAE3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
1N6169Semtech |
TVS DIODE 98.8V 187.3V AXIAL |
|
|
MXPLAD7.5KP11CARoving Networks / Microchip Technology |
TVS DIODE |
|
|
MXSMCGLCE64AE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V DO215AB |
