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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 58.1V |
| 电压 - 击穿（分钟）: | 64.6V |
| 电压 - 钳位（最大值）@ ipp: | 92V |
| 电流 - 峰值脉冲 (10/1000µs): | 6.5A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | T-18 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SMCG6041A/TR13Microsemi |
TVS DIODE 10V 16.7V DO215AB |
|
|
1.5SMC43CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
|
MAP6KE11CAE3Roving Networks / Microchip Technology |
TVS DIODE 9.4V 15.6V T-18 |
|
|
MXL1.5KE22CARoving Networks / Microchip Technology |
TVS DIODE 18.8V 30.6V CASE-1 |
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|
MXPLAD18KP12ARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V PLAD |
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MPLAD36KP14CAE3Roving Networks / Microchip Technology |
TVS DIODE 14V 24V PLAD |
|
|
ESDU3121MXT5GSanyo Semiconductor/ON Semiconductor |
12 V UNIDIRECTIONAL SURGE |
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|
MXSMCG90ARoving Networks / Microchip Technology |
TVS DIODE 90V 146V DO215AB |
|
|
MXP6KE39AE3Roving Networks / Microchip Technology |
TVS DIODE 33.3V 53.9V T-18 |
|
|
M1.5KE56CARoving Networks / Microchip Technology |
TVS DIODE 47.8V 77V CASE-1 |
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|
JANTX1N5657ARoving Networks / Microchip Technology |
TVS DIODE 85.5V 137V DO13 |
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|
MP6KE36AE3Roving Networks / Microchip Technology |
TVS DIODE 30.8V 49.9V T-18 |
|
|
MSMLG54CARoving Networks / Microchip Technology |
TVS DIODE 54V 87.1V DO215AB |
