类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 40.2V |
电压 - 击穿(分钟): | 44.7V |
电压 - 钳位(最大值)@ ipp: | 64.8V |
电流 - 峰值脉冲 (10/1000µs): | 23.2A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-201AA, DO-27, Axial |
供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JTX1N6116AUSSemtech |
T MET BI 500W 27V |
|
M1.5KE22ARoving Networks / Microchip Technology |
TVS DIODE 18.8V 30.6V CASE-1 |
|
JAN1N6145AUSSemtech |
TVS BI 1500W 12.35V SM |
|
MXLPLAD7.5KP17AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
MLCE64ARoving Networks / Microchip Technology |
TVS DIODE 64V 103V CASE-1 |
|
MXLPLAD6.5KP14AE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V PLAD |
|
SMCG6036E3/TR13Microsemi |
TVS DIODE 5.5V 11.7V DO215AB |
|
1N8174Roving Networks / Microchip Technology |
TVS DIODE |
|
MAPLAD30KP30ARoving Networks / Microchip Technology |
TVS DIODE 30V 48.8V PLAD |
|
SMPC75ANHM3/IVishay General Semiconductor – Diodes Division |
1.5KW 75V 5% UNIDIR SMPC TVS |
|
JTXV1N6125ASemtech |
T MET BI 500W 62V |
|
MXLP6KE43CARoving Networks / Microchip Technology |
TVS DIODE 36.8V 59.3V T-18 |
|
MALCE54AE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V CASE-1 |