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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 160V |
| 电压 - 击穿（分钟）: | 178V |
| 电压 - 钳位（最大值）@ ipp: | 259V |
| 电流 - 峰值脉冲 (10/1000µs): | 116A |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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JANTXV1N6167Roving Networks / Microchip Technology |
TVS DIODE |
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MXSMLG130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
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MAPLAD30KP150CAE3Roving Networks / Microchip Technology |
TVS DIODE 150V 243V PLAD |
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JANTXV1N6134Roving Networks / Microchip Technology |
TVS DIODE 114V 216.62V AXIAL |
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M1.5KE51CARoving Networks / Microchip Technology |
TVS DIODE 43.6V 70.1V CASE-1 |
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MAPLAD15KP8.0ARoving Networks / Microchip Technology |
TVS DIODE 8V 13.6V PLAD |
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SZESDM3551MXT5GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 5V X3DFN |
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MPLAD36KP120CAE3Roving Networks / Microchip Technology |
TVS DIODE 120V 193V PLAD |
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MXLP6KE9.1ARoving Networks / Microchip Technology |
TVS DIODE 7.78V 13.4V T-18 |
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MAP6KE16ARoving Networks / Microchip Technology |
TVS DIODE 13.6V 22.5V T-18 |
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1N5656ARoving Networks / Microchip Technology |
TVS DIODE 77.8V 125V DO13 |
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MXSMCG10CAE3Roving Networks / Microchip Technology |
TVS DIODE 10V 17V DO215AB |
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MSMBJ30A/TRRoving Networks / Microchip Technology |
TVS |
