类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 100V |
电压 - 击穿(分钟): | 111V |
电压 - 钳位(最大值)@ ipp: | 162V |
电流 - 峰值脉冲 (10/1000µs): | 18.6A |
功率-峰值脉冲: | 3000W (3kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AB, SMC |
供应商设备包: | SMLJ (DO-214AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MAPLAD36KP26CAE3Roving Networks / Microchip Technology |
TVS DIODE 26V 43V PLAD |
|
SMCJ13AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
MXPLAD7.5KP15AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
SMPC78ANHM3/IVishay General Semiconductor – Diodes Division |
1.5KW 78V 5% UNIDIR SMPC TVS |
|
SMPC40ANHM3/IVishay General Semiconductor – Diodes Division |
1.5KW 40V 5% UNIDIR SMPC TVS |
|
MXLPLAD36KP36AE3Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
|
SMCJ100CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
MAPLAD15KP100CARoving Networks / Microchip Technology |
TVS DIODE 100V 162V PLAD |
|
MPLAD18KP8.0CARoving Networks / Microchip Technology |
TVS DIODE 8V 13.6V PLAD |
|
SMAJ400E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 400V DO214AC |
|
MAPLAD15KP16ARoving Networks / Microchip Technology |
TVS DIODE 16V 26V PLAD |
|
MXPLAD36KP260CAE3Roving Networks / Microchip Technology |
TVS DIODE 260V 419V PLAD |
|
MXPLAD18KP51CARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |