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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 8.5V |
| 电压 - 击穿（分钟）: | 9.44V |
| 电压 - 钳位（最大值）@ ipp: | 14.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 1041A (1.041kA) |
| 功率-峰值脉冲: | 15000W (15kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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ESD5101AFCT5GSanyo Semiconductor/ON Semiconductor |
DIODE ESD 01005 DSN2 |
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ICT-18Roving Networks / Microchip Technology |
TVS DIODE 18V 25.2V DO13 |
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MAPLAD7.5KP20AE3Roving Networks / Microchip Technology |
TVS DIODE |
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1N6145AUSSemtech |
TVS DIODE 9.9V 18.2V |
|
|
5KP40A-HRWickmann / Littelfuse |
TVS DIODE 40V 64.5V P600 |
|
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1N6153USSemtech |
TVS DIODE 22.8V 43.6V |
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MXLPLAD18KP12ARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V PLAD |
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MSMLG9.0ARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO215AB |
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MX1N8179USRoving Networks / Microchip Technology |
TVS DIODE |
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5KP8.5AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V P600 |
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MAPLAD18KP28ARoving Networks / Microchip Technology |
TVS DIODE 28V 45.5V PLAD |
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MSMLG48CA/TRRoving Networks / Microchip Technology |
TVS |
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MP6KE12CAE3Roving Networks / Microchip Technology |
TVS DIODE 10.2V 16.7V T-18 |
