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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 160V |
| 电压 - 击穿（分钟）: | 178.7V |
| 电压 - 钳位（最大值）@ ipp: | 252.6V |
| 电流 - 峰值脉冲 (10/1000µs): | 120A |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MSMLJ90CA/TRRoving Networks / Microchip Technology |
TVS |
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MXLPLAD30KP45CARoving Networks / Microchip Technology |
TVS DIODE 45V 72.7V PLAD |
|
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MXLPLAD36KP70AE3Roving Networks / Microchip Technology |
TVS DIODE 70V 113V PLAD |
|
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MXLP6KE15AE3Roving Networks / Microchip Technology |
TVS DIODE 12.8V 21.2V T-18 |
|
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MV1N8177USRoving Networks / Microchip Technology |
TVS DIODE |
|
|
SMCJ5.0AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MXLCE8.5ARoving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V CASE-1 |
|
|
D3V3P4U10LP26-7Zetex Semiconductors (Diodes Inc.) |
TVS DIODE 3.3V 12V |
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|
MAPLAD36KP110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V PLAD |
|
|
JANTXV1N6124USRoving Networks / Microchip Technology |
TVS DIODE 42.6V 80.85V B SQ-MELF |
|
|
MAPLAD30KP78ARoving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
|
MP6KE7.5CARoving Networks / Microchip Technology |
TVS DIODE 6.4V 11.3V T-18 |
|
|
LC48ARoving Networks / Microchip Technology |
TVS DIODE 48V 77.4V DO202AA |
