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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 25.6V |
| 电压 - 击穿（分钟）: | 28.5V |
| 电压 - 钳位（最大值）@ ipp: | 41.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 36A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXPLAD7.5KP40CARoving Networks / Microchip Technology |
TVS DIODE |
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MAPLAD36KP24ARoving Networks / Microchip Technology |
TVS DIODE 24V 39.8V PLAD |
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TPSMB22AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 22V 5% SMB PAR |
|
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1.5CE13CA BK PBFREECentral Semiconductor |
TVS DIODE 11.1V 18.2V DO201 |
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MASMLG9.0CAE3Roving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO215AB |
|
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MXPLAD30KP90AE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
|
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MX1.5KE220CAE3Roving Networks / Microchip Technology |
TVS DIODE 185V 328V CASE-1 |
|
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MAPLAD18KP18ARoving Networks / Microchip Technology |
TVS DIODE 18V 29.2V PLAD |
|
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NSPU3071N2T5GSanyo Semiconductor/ON Semiconductor |
UNI-DIRECTIONAL SURGE PRO |
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MXPLAD18KP45AE3Roving Networks / Microchip Technology |
TVS DIODE 45V 72.7V PLAD |
|
|
MXLP6KE62CAE3Roving Networks / Microchip Technology |
TVS DIODE 53V 85V T-18 |
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|
MAP6KE160CARoving Networks / Microchip Technology |
TVS DIODE 136V 219V T-18 |
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P4SMA8.2CA-QJ.W. Miller / Bourns |
DIO TVS VBR 8.2V 400W BIDIR SMA |
