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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 150V |
| 电压 - 击穿（分钟）: | 167.6V |
| 电压 - 钳位（最大值）@ ipp: | 241.9V |
| 电流 - 峰值脉冲 (10/1000µs): | 62.4A |
| 功率-峰值脉冲: | 15000W (15kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MAPLAD6.5KP20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V MINI-PLAD |
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5KP33A-HRWickmann / Littelfuse |
TVS DIODE 33V 53.3V P600 |
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MPLAD36KP280CARoving Networks / Microchip Technology |
TVS DIODE 280V 451V PLAD |
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MXSMCGLCE120ARoving Networks / Microchip Technology |
TVS DIODE 120V 193V DO215AB |
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M1.5KE43AE3Roving Networks / Microchip Technology |
TVS DIODE 36.8V 59.3V CASE-1 |
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SZESD7571MXWT5GSanyo Semiconductor/ON Semiconductor |
TVS DIODE BIDIR 7V X2DFN2 |
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MSMCGLCE11AE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AB |
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MASMLG18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AB |
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MAPLAD15KP30CAE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.4V PLAD |
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JAN1N6126Roving Networks / Microchip Technology |
TVS DIODE 51.7V 101.96V AXIAL |
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MXPLAD30KP100CAE3Roving Networks / Microchip Technology |
TVS DIODE 100V 162V PLAD |
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30KPA90E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 90V P600 |
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MXSMCG8.5AE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO215AB |
