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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 43V |
| 电压 - 击穿（分钟）: | 47.8V |
| 电压 - 钳位（最大值）@ ipp: | 69.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 93A |
| 功率-峰值脉冲: | 6500W (6.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MPLAD18KP180ARoving Networks / Microchip Technology |
TVS DIODE 180V 291V PLAD |
|
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MXPLAD36KP150CAE3Roving Networks / Microchip Technology |
TVS DIODE 150V 243V PLAD |
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15KPA43AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 43V 69.8V P600 |
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TPSMC16AHE3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 13.6V 22.5V DO214AB |
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MXSMCG54ARoving Networks / Microchip Technology |
TVS DIODE 54V 87.1V DO215AB |
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MXSMCGLCE64ARoving Networks / Microchip Technology |
TVS DIODE 64V 103V DO215AB |
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MAPLAD36KP260ARoving Networks / Microchip Technology |
TVS DIODE 260V 419V PLAD |
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JANTX1N6158Roving Networks / Microchip Technology |
TVS DIODE 35.8V 67.83V C AXIAL |
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MXSMLJ12CA/TRRoving Networks / Microchip Technology |
HI REL TVS |
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1N6473USRoving Networks / Microchip Technology |
TVS DIODE 24V 41.4V GMELF |
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MSMLG51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V DO215AB |
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JTX1N6167Semtech |
T MET BI 1500W |
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30KPA144CA-HRWickmann / Littelfuse |
TVS DIODE 144V 223.2V P600 |
