English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 110V |
| 电压 - 击穿（分钟）: | 122V |
| 电压 - 钳位（最大值）@ ipp: | 177V |
| 电流 - 峰值脉冲 (10/1000µs): | 8.4A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AB, SMC Gull Wing |
| 供应商设备包: | SMCG (DO-215AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MPLAD18KP130CARoving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
|
MAPLAD7.5KP11AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MSMLG7.5CA/TRRoving Networks / Microchip Technology |
TVS |
|
|
MXUPTB48E3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MXL1.5KE11AE3Roving Networks / Microchip Technology |
TVS DIODE 9.4V 15.6V CASE-1 |
|
|
SMCJ40CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MX1.5KE24AE3Roving Networks / Microchip Technology |
TVS DIODE 20.5V 33.2V CASE-1 |
|
|
5KP6.0CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 6V 11.4V P600 |
|
|
JTX1N6162ASemtech |
T MET BI 1500W |
|
|
MXP6KE12ARoving Networks / Microchip Technology |
TVS DIODE 10.2V 16.7V T-18 |
|
|
PESD4USB5U-TBRXNexperia |
TVS DIODE XSON10 |
|
|
MPLAD36KP180CARoving Networks / Microchip Technology |
TVS DIODE 180V 291V PLAD |
|
|
SMCG6058A/TR13Microsemi |
TVS DIODE 53V 85V DO215AB |
