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| 类型 | 描述 |
|---|---|
| 系列: | 30KPA-HR |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 33V |
| 电压 - 击穿（分钟）: | 36.9V |
| 电压 - 钳位（最大值）@ ipp: | 58.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 517.9A |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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JTX1N6140Semtech |
T MET BI 1500W |
|
|
SMCJ70CA-QHJ.W. Miller / Bourns |
DIO TVS VRWM 70V 1500W BIDIR SMC |
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MAP6KE13AE3Roving Networks / Microchip Technology |
TVS DIODE 11.1V 18.2V T-18 |
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M1.5KE68ARoving Networks / Microchip Technology |
TVS DIODE 58.1V 92V CASE-1 |
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JTX1N6150AUSSemtech |
T MET BI 1500W SM |
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MXLP6KE13ARoving Networks / Microchip Technology |
TVS DIODE 11.1V 18.2V T-18 |
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JAN1N6047ARoving Networks / Microchip Technology |
TVS DIODE 18V 30.6V DO13 |
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MV1N8148USRoving Networks / Microchip Technology |
TVS DIODE |
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MAPLAD15KP150CARoving Networks / Microchip Technology |
TVS DIODE 150V 243V PLAD |
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5KP11E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 11V 20.1V P600 |
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MAPLAD30KP260CAE3Roving Networks / Microchip Technology |
TVS DIODE 260V 419V PLAD |
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MXLP6KE10ARoving Networks / Microchip Technology |
TVS DIODE 8.55V 14.5V T-18 |
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MQ1N8176Roving Networks / Microchip Technology |
TVS DIODE |
