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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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ESD102-U2-099ELE6327XTSA1Rochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
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MSMBJSAC7.0E3/TRRoving Networks / Microchip Technology |
TVS |
|
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MAPLAD15KP90ARoving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
|
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P6KE13CA TR PBFREECentral Semiconductor |
TVS DIODE 11.1V 18.2V DO15 |
|
|
MXL1.5KE6.8CAE3Roving Networks / Microchip Technology |
TVS DIODE 5.8V 10.5V CASE-1 |
|
|
MSMCGLCE6.5AE3Roving Networks / Microchip Technology |
TVS DIODE 6.5V 11.2V DO215AB |
|
|
SMCJ110CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MAP6KE12CAE3Roving Networks / Microchip Technology |
TVS DIODE 10.2V 16.7V T-18 |
|
|
1.5CE400CA BK PBFREECentral Semiconductor |
TVS DIODE 342V 548V DO201 |
|
|
SMC5K14A-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 14V 23.2V DO214AB |
|
|
MAPLAD30KP33ARoving Networks / Microchip Technology |
TVS DIODE 33V 53.3V PLAD |
|
|
MSMBJSAC75E3/TRRoving Networks / Microchip Technology |
TVS |
|
|
MXPLAD30KP36AE3Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
