English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 51V |
| 电压 - 击穿（分钟）: | 56.7V |
| 电压 - 钳位（最大值）@ ipp: | 82.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 36.4A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AB, SMC Gull Wing |
| 供应商设备包: | SMLG (DO-215AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLPLAD6.5KP12ARoving Networks / Microchip Technology |
TVS DIODE 12V 19.9V PLAD |
|
|
MXPLAD30KP130CAE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
|
VCAN33A2-03G-E3-08Vishay General Semiconductor – Diodes Division |
ESD PROTECTION DIODE SOT323-E3 |
|
|
MXSMCG160CAE3Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO215AB |
|
|
MXLPLAD18KP13AE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V PLAD |
|
|
MXPLAD30KP45CAE3Roving Networks / Microchip Technology |
TVS DIODE 45V 72.7V PLAD |
|
|
MX1.5KE33CARoving Networks / Microchip Technology |
TVS DIODE 28.2V 45.7V CASE-1 |
|
|
15KPA43CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 43V 69.8V P600 |
|
|
LC13ARoving Networks / Microchip Technology |
TVS DIODE 13V 21.5V DO202AA |
|
|
MXLPLAD18KP33AE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V PLAD |
|
|
MXPLAD15KP36AE3Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
|
|
MAPLAD15KP70AE3Roving Networks / Microchip Technology |
TVS DIODE 70V 113V PLAD |
|
|
MXSMLG160CAE3Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO215AB |
