English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 22V |
| 电压 - 击穿（分钟）: | 24.4V |
| 电压 - 钳位（最大值）@ ipp: | 35.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 42A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | 100pF @ 1MHz |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AB, SMC Gull Wing |
| 供应商设备包: | SMCG (DO-215AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MXLPLAD7.5KP12CARoving Networks / Microchip Technology |
TVS DIODE |
|
|
JANTXV1N5637ARoving Networks / Microchip Technology |
TVS DIODE 12.8V 21.2V DO13 |
|
|
MSMLJ150CA/TRRoving Networks / Microchip Technology |
TVS |
|
|
MPLAD18KP75CAE3Roving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V PLAD |
|
|
MAPLAD18KP18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V PLAD |
|
|
MALCE51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V CASE-1 |
|
|
TPSMB24AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 24V 5% SMB PAR |
|
|
MXSMCG110CAE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AB |
|
|
30KPA66CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 66V P600 |
|
|
MXPLAD6.5KP15ARoving Networks / Microchip Technology |
TVS DIODE 15V 24.4V PLAD |
|
|
MXLPLAD6.5KP11ARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V PLAD |
|
|
JTX1N6106Semtech |
T MET BI 500W 10V |
|
|
5KP16AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 16V 26V P600 |
