类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 171V |
电压 - 击穿(分钟): | 190V |
电压 - 钳位(最大值)@ ipp: | 274V |
电流 - 峰值脉冲 (10/1000µs): | 5.5A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-201AA, DO-27, Axial |
供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MAPLAD6.5KP11AE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V MINI-PLAD |
|
MASMCG8.5CARoving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO215AB |
|
MXL1.5KE82ARoving Networks / Microchip Technology |
TVS DIODE 70.1V 113V CASE-1 |
|
JAN1N6166Roving Networks / Microchip Technology |
TVS DIODE 76V 144.48V C AXIAL |
|
MXLP6KE15CAE3Roving Networks / Microchip Technology |
TVS DIODE 12.8V 21.2V T-18 |
|
MXLSMLG36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO215AB |
|
MXLPLAD15KP13AE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V PLAD |
|
MXLUPT28Roving Networks / Microchip Technology |
TVS DIODE |
|
ESDM1051MX4T5GSanyo Semiconductor/ON Semiconductor |
ESD PROT 5.5V |
|
15KPA17E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 17V P600 |
|
MX1.5KE11AE3Roving Networks / Microchip Technology |
TVS DIODE 9.4V 15.6V CASE-1 |
|
1.5CE130A BK PBFREECentral Semiconductor |
TVS DIODE 111V 179V DO201 |
|
MPLAD30KP17CA/TRRoving Networks / Microchip Technology |
TVS |