类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 90V |
电压 - 击穿(分钟): | 100V |
电压 - 钳位(最大值)@ ipp: | 146V |
电流 - 峰值脉冲 (10/1000µs): | 124A |
功率-峰值脉冲: | 18000W (18kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | Nonstandard SMD |
供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VCAN33A2-03GHE3-08Vishay General Semiconductor – Diodes Division |
ESD PROTECTION DIODE SOT323-HE3 |
|
MXLPLAD36KP130CAE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
MXSMCGLCE28AE3/TRRoving Networks / Microchip Technology |
HI REL TVS |
|
MAPLAD30KP18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 30.8V PLAD |
|
MXSMCG85CAE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
|
MASMCG11CAE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AB |
|
JTX1N6160ASemtech |
T MET BI 1500W |
|
JANTXV1N6103ARoving Networks / Microchip Technology |
TVS DIODE 5.7V 11.2V AXIAL |
|
CPDV8V0-HFComchip Technology |
ESD DIODE 8VWM BI-DIRECTIONAL SO |
|
1.5SMC39AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
DA473S6-TL-HRochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
|
JANTX1N6054ARoving Networks / Microchip Technology |
TVS DIODE 36V 59.3V DO13 |
|
1N6161USSemtech |
TVS DIODE 47.1V 89.3V |