English
简体中文
FIXED IND 910NH 685MA 240 MOHM
TVS DIODE 6V 13V SC70-6
RECT BRIDGE 800V 4A GBU
IC INTFACE SPECIALIZED 288SBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Single Phase |
| 技术: | Standard |
| 电压 - 反向峰值（最大值）: | 800 V |
| 电流 - 平均整流 (io): | 4 A |
| 电压 - 正向 (vf) (max) @ if: | 1 V @ 2 A |
| 电流 - 反向泄漏@ vr: | 5 µA @ 800 V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 4-SIP, GBU |
| 供应商设备包: | GBU |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BU20105S-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 1KV 20A BU-5S |
|
DF1508SZetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1P 800V 1.5A DF-S |
|
KBPC35005-GComchip Technology |
BRIDGE RECT 1PHASE 50V 35A KBPC |
|
KBPC1504-GComchip Technology |
BRIDGE RECT 1PHASE 400V 15A KBPC |
|
DBLS152G RDGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 100V 1.5A DBLS |
|
GBPC3508WGeneSiC Semiconductor |
BRIDGE RECT 1P 800V 35A GBPC-W |
|
EABS1J REGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 600V 1A ABS |
|
GBU410-GComchip Technology |
BRIDGE RECT 1PHASE 1KV 4A GBU |
|
KBL608Rectron USA |
BRIDGE RECT GLASS 800V 6A KBL |
|
RS1005MLSRectron USA |
BRDGE RCT GLASS 600V 10A RS10MLS |
|
KBPC610-A1-0000 |
RECT BRIDGE 1000V 6A KBPC6 |
|
DF1504ST-GComchip Technology |
BRIDGE RECT 1PHASE 400V 1.5A DFS |
|
TSS4B01GHC2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 50V 4A TS4B |