English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Single Phase |
| 技术: | Standard |
| 电压 - 反向峰值（最大值）: | 400 V |
| 电流 - 平均整流 (io): | 2 A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 3.14 A |
| 电流 - 反向泄漏@ vr: | 5 µA @ 400 V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 4-SIP, RS-1 |
| 供应商设备包: | RS-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GBP310S-B1-0000HF |
RECT BRIDGE 1000V 3A GBP |
|
VUO110-16NO7Wickmann / Littelfuse |
BRIDGE RECT 3P 1.6KV 127A PWS-E1 |
|
KBPC2508WGeneSiC Semiconductor |
BRIDGE RECT 1P 800V 25A KBPC-W |
|
DBA40GRochester Electronics |
BRIDGE RECTIFIER DIODE |
|
GBU601TBSMC Diode Solutions |
BRIDGE RECT 1PHASE 100V 6A GBU |
|
EABS1DHREGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 200V 1A ABS |
|
DBLS205GHRDGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 600V 2A DBLS |
|
RMB2S-E3/80Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 200V TO269AA |
|
GBPC1206WSanyo Semiconductor/ON Semiconductor |
BRIDGE RECT 1P 600V 12A GBPC-W |
|
VS-26MT160Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 3P 1.6KV 25A D-63 |
|
NTE5391NTE Electronics, Inc. |
R-SI BRIDGE 400V 35A |
|
GBJ25005-FZetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 50V 25A GBJ |
|
GBPC3502-E4/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 200V 35A GBPC |
