CAP CER 82PF 630V NP0 1210
BRIDGE RECT 1P 200V 500MA 4SOIC
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Single Phase |
技术: | Standard |
电压 - 反向峰值(最大值): | 200 V |
电流 - 平均整流 (io): | 500 mA |
电压 - 正向 (vf) (max) @ if: | 1 V @ 500 mA |
电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | TO-269AA, 4-BESOP |
供应商设备包: | 4-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BU25H08-E3/AVishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 600V 3.5A BU |
|
APTDR90X1601GRoving Networks / Microchip Technology |
BRIDGE RECT 3PHASE 1.6KV 90A SP1 |
|
GBU604Zetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 400V 6A GBU |
|
VBO40-16NO6Wickmann / Littelfuse |
BRIDGE RECT 1P 1.6KV 40A SOT227B |
|
MB4S-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 400V TO269AA |
|
RS1504MRectron USA |
BRIDGE RECT GLASS 400V 15A RS15M |
|
SBS24HREGTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 40V 2A ABS |
|
DF08S-E3/77Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 800V 1A DFS |
|
BU1010A5S-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 1KV 10A BU-5S |
|
2RS101MRectron USA |
BRIDGE RECT 50V 2A RS-1M |
|
M50100TB800Sensata Technologies – Crydom |
BRIDGE RECT 3P 800V 100A MODULE |
|
RS605MRectron USA |
BRIDGE RECT GLASS 600V 6A RS-6M |
|
BU1010-M3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1P 1KV 10A BU |