SHIELDED POWER INDUCTORS, 180UH
BRIDGE RECT 1PHASE 1KV 8A TS-6P
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tube |
零件状态: | Active |
二极管型: | Single Phase |
技术: | Standard |
电压 - 反向峰值(最大值): | 1 kV |
电流 - 平均整流 (io): | 8 A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 8 A |
电流 - 反向泄漏@ vr: | 10 µA @ 1000 V |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | 4-SIP, TS-6P |
供应商设备包: | TS-6P |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BF3510TVSTMicroelectronics |
BRIDGE RECT 1P 1KV 35A ISOTOP |
|
APTDC40H601GMicrosemi |
BRIDGE RECT 1PHASE 600V 40A SP1 |
|
GBJ604Zetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1PHASE 400V 6A GBJ |
|
G5SBA60L-E3/45Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 600V 2.8A GBU |
|
TS15P05GHC2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 600V 15A TS-6P |
|
G5SBA80-E3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 800V 2.8A GBU |
|
CBRSDSH2-60 TR13Central Semiconductor |
BRIDGE RECT 1PHASE 60V 2A 4SMDIP |
|
TS20P03G D2GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1P 200V 20A TS-6P |
|
TS4K80HD3GTSC (Taiwan Semiconductor) |
BRIDGE RECT 1PHASE 800V 4A TS4K |
|
MSD52-12Microsemi |
BRIDGE RECT 3PHASE 1.2KV 50A SM2 |
|
CBR10-J080Central Semiconductor |
BRIDGE RECT 1PHASE 800V 10A CM |
|
SDM1L30BLP-13Zetex Semiconductors (Diodes Inc.) |
BRIDGE RECT 1P 30V 1A DFN5060-4 |
|
G3SBA80-E3/51Vishay General Semiconductor – Diodes Division |
BRIDGE RECT 1PHASE 800V 2.3A GBU |