类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
二极管配置: | - |
二极管型: | - |
电压 - 直流反向 (vr) (max): | - |
电流 - 平均整流 (io)(每个二极管): | - |
电压 - 正向 (vf) (max) @ if: | - |
速度: | - |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | - |
工作温度 - 结: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BYV430W-600PQWeEn Semiconductors Co., Ltd |
ULTRAFAST POWER DIODE |
|
1S2076ATD-E-QRochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
PD410611Powerex, Inc. |
DIODE MODULE 600V 1100A POWRBLOK |
|
BAT54A-F2-0000HF |
SCHOTTKY DIODE 30V 0.2A SOT-23-3 |
|
MDMA425P1600PT-PCWickmann / Littelfuse |
MDMA425P1600PTSF-PC |
|
MBR20060CTRGeneSiC Semiconductor |
DIODE MODULE 60V 200A 2TOWER |
|
HSC226JKRF-ERochester Electronics |
SCHOTTKY BARRIER DIODE |
|
CPH3403-TL-ERochester Electronics |
N-CHANNEL MOS SILICON FET |
|
APT2X100D120JRoving Networks / Microchip Technology |
DIODE MODULE 1.2KV 93A ISOTOP |
|
MBR20040CTRGeneSiC Semiconductor |
DIODE MODULE 40V 200A 2TOWER |
|
JAN1N7037CCU1Roving Networks / Microchip Technology |
DIODE SCHOTTKY 35A 100V SMD |
|
SBRD116CTT4Rochester Electronics |
DEVELOPMENT KITS/ACCESSORIES |
|
VS-VSKD270-08PBFVishay General Semiconductor – Diodes Division |
DIODE GEN 800V 135A MAGNAPAK |