English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管配置: | 1 Pair Common Cathode |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 1200 V |
| 电流 - 平均整流 (io)（每个二极管）: | 18A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.7 V @ 5 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 100 µA @ 1200 V |
| 工作温度 - 结: | -55°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VS-8DKH02-01HM3/HVishay General Semiconductor – Diodes Division |
FREDS 200V - FLATPAK 5X6-E3 |
|
|
1S2075K-JRochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
|
MBR300100CTRGeneSiC Semiconductor |
DIODE MODULE 100V 300A 2TOWER |
|
|
HSM107S-JTLRochester Electronics |
SCHOTTKY BARRIER DIODE |
|
|
VS-VSUD200CH40PBFVishay General Semiconductor – Diodes Division |
MODULE DIODE 200A HALFPAK |
|
|
MBR200100CTGeneSiC Semiconductor |
DIODE MODULE 100V 200A 2TOWER |
|
|
JANTX1N4148UBCCRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA SMD |
|
|
F1842RD1200Sensata Technologies – Crydom |
DIODE MODULE 1.2KV 40A |
|
|
HSM126STR-ERochester Electronics |
SCHOTTKY BARRIER DIODE |
|
|
MDMA85P1200TGWickmann / Littelfuse |
DIODE MODULE 1.2KV 85A TO240AA |
|
|
SET050224Semtech |
DIODE MODULE 400V 30A |
|
|
VS-6DKH02-M3/IVishay General Semiconductor – Diodes Division |
FREDS 200V - FLATPAK 5X6-E3 |
|
|
F1842RD1400Sensata Technologies – Crydom |
DIODE MODULE 1.4KV 40A |
