English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管配置: | - |
| 二极管型: | - |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io)（每个二极管）: | 45A |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 54 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 2 µs |
| 电流 - 反向泄漏@ vr: | 6 µA @ 600 V |
| 工作温度 - 结: | -55°C ~ 175°C |
| 安装类型: | Chassis, Stud Mount |
| 包/箱: | Module |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTXV1N6660CAT1Microsemi |
DIODE ARRAY SCHOTTKY 45V TO254AA |
|
|
ND412026Powerex, Inc. |
DIODE MODULE 2KV 260A POW-R-BLOK |
|
|
MBR20200CTS-B1-0000HF |
SCHOTTKY DIODE 200V 20A TO-220AB |
|
|
S1KW48C-6DSemtech |
DIODE GEN PURP 48KV 1.5A |
|
|
MBR20080CTRGeneSiC Semiconductor |
DIODE MODULE 80V 200A 2TOWER |
|
|
VS-VSKD250-12PBFVishay General Semiconductor – Diodes Division |
DIODE GEN 1.2KV 125A MAGNAPAK |
|
|
MBR20200CT-B1-0000 |
SCHOTTKY DIODE 200V 20A TO-220AB |
|
|
1S2076AS7ARochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
|
HSM226STR-ERochester Electronics |
SCHOTTKY BARRIER DIODE |
|
|
MEK600-04DAWickmann / Littelfuse |
DIODE MODULE 400V 880A Y4-M6 |
|
|
VS-VSKD250-20PBFVishay General Semiconductor – Diodes Division |
DIODE GEN 2KV 125A MAGNAPAK |
|
|
F1857RD400Sensata Technologies – Crydom |
DIODE MODULE 400V 55A |
|
|
VS-VSKJ91/04Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 50A ADDAPAK |
