English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 60 V |
| 电流 - 平均整流 (io): | 10A |
| 电压 - 正向 (vf) (max) @ if: | 650 mV @ 10 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 500 µA @ 60 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-3 |
| 供应商设备包: | TO-220AB |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTE6355NTE Electronics, Inc. |
R-400 PRV 300A ANODE CASE |
|
PMEG2005BELD,315Nexperia |
DIODE SCHOT 20V 500MA DFN1006-2 |
|
RS1JLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SOD123W |
|
BAS70,235Rochester Electronics |
NOW NEXPERIA BAS70 - RECTIFIER D |
|
SE40PG-M3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2.4A TO277A |
|
BYT53C-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 150V 1.9A SOD57 |
|
NTE573-1NTE Electronics, Inc. |
R-SCHOTTKY BARRIER 100V5A |
|
UG1JPL-TPMicro Commercial Components (MCC) |
ULTRAFAST RECTIFIERS 600V 1A SOD |
|
SE20PJHM3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1.6A DO220AA |
|
F1892D600Sensata Technologies – Crydom |
DIODE GEN PURP 600V 90A MODULE |
|
SK53C V6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 5A 30V DO-214AB |
|
APT10SCD120KMicrosemi |
DIODE SCHOTTKY 1.2KV 10A TO220 |
|
BYT52J-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.4A SOD57 |
