







MEMS OSC XO 4.0000MHZ H/LV-CMOS
MOSFET N-CH 40V 35.3A LFPAK56
DIODE GP 150V 250MA MICROMELF
CONTACT BLOCK SPST-NC 10A 110V
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 150 V |
| 电流 - 平均整流 (io): | 250mA (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1 V @ 100 mA |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 50 ns |
| 电流 - 反向泄漏@ vr: | 100 nA @ 150 V |
| 电容@vr, f: | 1.5pF @ 0V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | 2-SMD, No Lead |
| 供应商设备包: | MicroMELF |
| 工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
VSS8D5M10HM3/IVishay General Semiconductor – Diodes Division |
5A, 100V, SLIMSMAW TRENCH SKY RE |
|
|
PMEG6030EP/8XNexperia |
DIODE SCHOT 60V 3A SOD128/CFP5 |
|
|
UGB8CTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A TO263AB |
|
|
SE10DJHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A TO263AC |
|
|
SCS310APC9ROHM Semiconductor |
DIODE SC SCHKY 650V 10A TO220ACP |
|
|
SMBT1580LT1GRochester Electronics |
DIODE STD REC SOT23 |
|
|
SL22-E3/52TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 2A DO214AA |
|
|
JANTX1N5614Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
|
BYV13-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A SOD57 |
|
|
BYG24J-M3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A |
|
|
1N4148,133Rochester Electronics |
RECTIFIER DIODE |
|
|
S1JB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AA |
|
|
ES3B V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |