类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 15 V |
电流 - 平均整流 (io): | 180A |
电压 - 正向 (vf) (max) @ if: | 400 mV @ 180 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 60 mA @ 15 V |
电容@vr, f: | 12300pF @ 5V, 1MHz |
安装类型: | Chassis Mount |
包/箱: | HALF-PAK |
供应商设备包: | PRM1-1 (Half Pak Module) |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BAS45AL,115Nexperia |
DIODE GEN PURP 125V 250MA LLDS |
|
BAS286-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 200MA SOD80 |
|
TST20H200CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 10A TO220AB |
|
STPS1L20MFSTMicroelectronics |
DIODE SCHOTTKY 20V 1A STMITEFLAT |
|
CD214B-R2400J.W. Miller / Bourns |
DIODE GEN PURP 400V 2A SMB |
|
ES3J V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO214AB |
|
BAS21LT3GSanyo Semiconductor/ON Semiconductor |
DIODE GP 250V 200MA SOT23-3 |
|
MBRH24030GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 240A D67 |
|
US1JHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
|
1SS400 RJGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 200MA SOD523 |
|
SS23L RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 2A SUB SMA |
|
1N5061NTE Electronics, Inc. |
R-600PRV 1A |
|
VS-MURB820TRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263 |