类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1600 V |
电流 - 平均整流 (io): | 60A |
电压 - 正向 (vf) (max) @ if: | 2.04 V @ 60 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 230 ns |
电流 - 反向泄漏@ vr: | 200 µA @ 1400 V |
电容@vr, f: | 32pF @ 1200V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-247-2 |
供应商设备包: | TO-247AD |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-SD1700C36KVishay General Semiconductor – Diodes Division |
DIODE GP 3.6KV 2080A DO200AC |
|
GP10G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
SR306HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A DO201AD |
|
CD1408-F1200J.W. Miller / Bourns |
DIODE GEN PURP 200V 1A 1408 |
|
NRVS3ABSanyo Semiconductor/ON Semiconductor |
SR SMB GPPN 3A 50V |
|
S1GL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SUB SMA |
|
1N4148WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
|
HS5M R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 5A DO214AB |
|
1N5398GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1.5A DO204AC |
|
FM4006-WRectron USA |
DIODE GEN PURP 800V 1 A SMA |
|
NRVB30H100MFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 30A 5DFN |
|
UF4004-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
1SS401(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 20V 300MA SC70 |