类型 | 描述 |
---|---|
系列: | - |
包裹: | Cut Tape (CT)Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 2.5A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 2.5 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 2.5 µA @ 600 V |
电容@vr, f: | 45pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-204AC, DO-15, Axial |
供应商设备包: | DO-15 |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMSD3070Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 200MA SOD123 |
|
SE12DG-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3.2A TO263AC |
|
BAS283-GS08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
|
S2KDFQ-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 800V 2A DFLAT |
|
1N4246GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
BYM10-400-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
SK1C0SURGE |
1A -200V - SMA (DO-214AC) - RECT |
|
ES3B R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
SBAS20HT1GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 200MA SOD323 |
|
BAS21W,115Nexperia |
DIODE GEN PURP 250V 225MA SOT323 |
|
IDK09G65C5XTMA2IR (Infineon Technologies) |
DIODE SCHOTTKY 650V 9A TO263-2 |
|
D6001N50TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 5KV 8010A |
|
P2000DTL-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |