类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 60 V |
电流 - 平均整流 (io): | 7A |
电压 - 正向 (vf) (max) @ if: | 600 mV @ 7 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 100 µA @ 60 V |
电容@vr, f: | 375pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | Powermite®3 |
供应商设备包: | Powermite 3 |
工作温度 - 结: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RS1K M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO214AC |
|
BAT54Rochester Electronics |
RECTIFIER, SCHOTTKY, 0.2A, 30V, |
|
VB10150S-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 10A 150V TO-263AB |
|
VSKY05401006-G4-08Vishay General Semiconductor – Diodes Division |
DIODE SCHTKY 40V 500MA CLP10062L |
|
RS3K R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
|
HS3GB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AA |
|
ACGRB207-HFComchip Technology |
DIODE GEN PURP 1KV 2A DO214AA |
|
1N649-1Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 400MA DO35 |
|
ES1HL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 1A SUB SMA |
|
GP10JE-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
AS1PK-M3/85AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.5A DO220 |
|
RB751G-40-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 30MA SOD723 |
|
VS-3ECH01-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A SMC |