类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard, Reverse Polarity |
电压 - 直流反向 (vr) (max): | 1200 V |
电流 - 平均整流 (io): | 85A |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 267 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 9 mA @ 1200 V |
电容@vr, f: | - |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-203AB, DO-5, Stud |
供应商设备包: | DO-203AB |
工作温度 - 结: | -65°C ~ 180°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DSE010-TR-ERochester Electronics |
DIODE GEN PURP 80V 100MA |
|
V10P45HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO277A |
|
SS24-HFComchip Technology |
DIODE SCHOTTKY 40V 2A DO214AC SM |
|
1N4002GPE-E3/91Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
SJPB-H4VSanken Electric Co., Ltd. |
DIODE SCHOTTKY 40V 2A SJP |
|
UF4002HA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
U3B-M3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO214AB |
|
GF1GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 1A SMA |
|
US1JFL-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1A DO221AC |
|
GF1B-E3/67AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214BA |
|
GP3D010A170BSemiQ |
SIC SCHOTTKY DIODE 1700V TO247-2 |
|
SR505HA0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 5A DO201AD |
|
RS1J-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A SMA |