FUSE BOARD MNT 250MA 32VDC 0402
DIODE GPP 800V 1A DO41
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 500 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 560 V |
电容@vr, f: | 15pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S310Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 3A SMC |
|
NTE5805NTE Electronics, Inc. |
R-500 PRV 3A AXIAL LEAD |
|
SJPW-F6VSanken Electric Co., Ltd. |
DIODE SCHOTTKY 60V 1.5A SJP |
|
RSFML M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500MA SUB SMA |
|
AU2PM-M3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.3A TO277 |
|
AU01AV0Sanken Electric Co., Ltd. |
DIODE GEN PURP 600V 500MA AXIAL |
|
ES2FAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 2A DO214AC |
|
ES2LJHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO214AA |
|
V8P15HM3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 8A TO277A |
|
V15P15-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 15A TO277A |
|
1SS321,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL SCHOTTKY BARRIER DI |
|
UPR15/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 2.5A DO216 |
|
BY203-20STAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1.2KV 250MA SOD57 |