类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 48A (DC) |
电压 - 正向 (vf) (max) @ if: | - |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 200 µA @ 650 V |
电容@vr, f: | 1989pF @ 1V, 100kHz |
安装类型: | Through Hole |
包/箱: | TO-247-2 |
供应商设备包: | TO-247-2 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-8ETX06STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
RS3KHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
|
SS5P3-M3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 5A TO277A |
|
SR204-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 2A DO41 |
|
1N5402T-GComchip Technology |
DIODE GEN PURP 200V 3A DO201AD |
|
MBRM2H100T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 2A POWERMITE |
|
SS24S-E3/61TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AC |
|
FESB8DT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
|
ER1B-LTPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 1A DO214AA |
|
SMMBD770T1GRochester Electronics |
MIXER DIODE |
|
1N4148WQ-7-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 300MA SOD123 |
|
FR105G-D1-3000 |
DIODE GEN PURP 600V 1A DO41 |
|
1N4933G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO204AL |