类型 | 描述 |
---|---|
系列: | Amp+™ |
包裹: | Tube |
零件状态: | Discontinued at Digi-Key |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 1700 V |
电流 - 平均整流 (io): | 5A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.75 V @ 5 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 1700 V |
电容@vr, f: | 406pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-247-2 |
供应商设备包: | TO-247-2 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S2G M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO214AA |
|
1N5819-GComchip Technology |
DIODE SCHOTTKY 40V 1A DO41 |
|
AS3PD-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2.1A TO277A |
|
BAT54-02V-V-G-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD523 |
|
1PS79SB70,315Nexperia |
DIODE SCHOTTKY 70V 70MA SOD523 |
|
BYV28-200-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 3.5A SOD64 |
|
S4PJ-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A TO277A |
|
1N4003-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
MBR1660-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 16A TO220AB |
|
PMEG4020EPA,115Rochester Electronics |
NOW NEXPERIA PMEG4020EPA - RECTI |
|
BYC10-600,127WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 500V 10A TO220AC |
|
RSFALHRQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 500MA SUB SMA |
|
CDBU00340-HFComchip Technology |
DIODE SCHOTTKY 40V 30MA 0603 |