English
简体中文
CAP CER 1.8PF 1.5KV C0G/NP0 1206
FIXED IND 1.8UH 20MA 1.16 OHM
RBQ30TB45BNZ IS SCHOTTKY BARRIER
IC RF TXRX+MCU ISM<1GHZ 42VFLGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 45 V |
| 电流 - 平均整流 (io): | 30A |
| 电压 - 正向 (vf) (max) @ if: | 590 mV @ 30 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 350 µA @ 45 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 Full Pack |
| 供应商设备包: | TO-220FN-2 |
| 工作温度 - 结: | 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTXV1N5617Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 1A AXIAL |
|
UG2JA M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO214AC |
|
RBR2MM60CTRROHM Semiconductor |
DIODE SCHOTTKY 60V 2A PMDU |
|
GPP20G-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO204AC |
|
SE30PAJ-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1.4A DO221BC |
|
SK515C R7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 5A DO214AB |
|
CD214B-R31000J.W. Miller / Bourns |
DIODE GEN PURP 1KV 3A SMB |
|
CD214B-S3JJ.W. Miller / Bourns |
DIO RECT |
|
SS22SHE3_B/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 2A DO214AC |
|
DPG10IM300UC-TRLWickmann / Littelfuse |
DIODE GEN PURP 300V 10A TO252 |
|
S1GHESanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 1A SOD323HE |
|
VS-12TQ035S-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 15A D2PAK |
|
JAN1N6642USRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA D5D |