English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 150 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 50 V |
| 电容@vr, f: | 30pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AD, Axial |
| 供应商设备包: | DO-201AD |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GSD2004WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 240V 225MA SOD323 |
|
S1PJ-M3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO220AA |
|
VS-8ETU04STRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
|
V35DM120-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 6.3A TO263AC |
|
SFF1006G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 10A ITO220AB |
|
S15GLW RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1.5A SOD123W |
|
S85JGeneSiC Semiconductor |
DIODE GEN PURP 600V 85A DO5 |
|
MUR420GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 4A DO201AD |
|
1N3613Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1A AXIAL |
|
BAV21,113Nexperia |
DIODE GEN PURP 200V 250MA ALF2 |
|
DFLR1400-7Zetex Semiconductors (Diodes Inc.) |
DIODE GP 400V 1A POWERDI123 |
|
VS-305U160Vishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 330A DO205AB |
|
DHG30I600PAWickmann / Littelfuse |
DIODE GEN PURP 600V 30A TO220AC |
